tc58dvm92a5ta00 TOSHIBA Semiconductor CORPORATION, tc58dvm92a5ta00 Datasheet - Page 34

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tc58dvm92a5ta00

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tc58dvm92a5ta00
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Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Failure phenomena for Program and Erase operations
The following possible failure modes should be considered when implementing a highly reliable system.
Block
Page
Single Bit
Do not turn off the power before write/erase operation is complete. Avoid using the device when the battery
is low. Power shortage and/or power failure before write/erase operation is complete will cause loss of data
and/or damage to data.
The device may fail during a Program or Erase operation.
ECC: Error Correction Code. 1 bit correction per 512 Bytes is necessary.
Block Replacement
Program
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
memory
FAILURE MODE
Buffer
Erase Failure
Programming
Failure
Programming
Failure
1 → 0
Error occurs
Status Read after Erase → Block Replacement
Status Read after Program → Block Replacement
ECC
Figure 26.
DETECTION AND COUNTERMEASURE SEQUENCE
Block A
Block B
34
reprogram the data into another Block (Block
B) by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
When an error happens in Block A, try to
TC58DVM92A5TA00
2010-07-13

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