tc58dvm92a5tai0 TOSHIBA Semiconductor CORPORATION, tc58dvm92a5tai0 Datasheet - Page 6

• Manufacturer Part Number: tc58dvm92a5tai0
• Description: 512-mbit 64m ? 8 Bits Cmos Nand E Prom Description
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Note:
AC TEST CONDITIONS
PROGRAMMING AND ERASING CHARACTERISTICS
(Ta = -40° to 85°C, V
RY
Vcc
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
t
N
t
(1): Refer to Application Note (12) toward the end of this document.
PROG
BERASE
/
SYMBOL
RE
CE
BY
(1) CE High to Ready time depends on the pull-up resister tied to the
(2) Sequential Read is terminated when t
ns ,
(Refer to Application Note (9) toward the end of this document.)
PARAMETER
Programming Time
Number of Programming Cycles on Same
Page
Block Erasing Time
RY
525
/
BY
CC
signal stays Ready.
= 2.7 V to 3.6 V)
PARAMETER
CEH
is greater than or equal to 100 ns. If the RE to CE delay is less than 30
527
C
V
L
CC
(100 pF) + 1 TTL
CONDITION
2.7V to 3.6V
− 0.2 V, 0.2 V
V
V
6
CC
CC
3 ns
A
MIN
⎯
⎯
⎯
/ 2
/ 2
t
CEH
Busy
≧ 100 ns
t
CRY
TYP.
300
2.5
⎯
RY
/
BY
A
pin.
: 0 to 30 ns → Busy signal is not output.
MAX
700
*
3
7
TC58DVM92A5TAI0
* : V
UNIT
ms
µ s
IH
or V
2010-04-23
IL
NOTES
(1)