lm5035bsqx National Semiconductor Corporation, lm5035bsqx Datasheet - Page 4

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lm5035bsqx

Manufacturer Part Number
lm5035bsqx
Description
Pwm Controller With Integrated Half-bridge And Syncfet Drivers
Manufacturer
National Semiconductor Corporation
Datasheet

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Part Number:
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TSSOP
PIN
EP
11
12
13
14
15
16
17
18
19
20
LLP PIN
EP
11
12
13
14
15
16
17
18
19
21
10
20
22
1
PGND
Name
VCC
SR2
SR1
REF
VIN
HO
HB
HS
NC
NC
NC
NC
LO
EP
Boost voltage for the HO driver
Switch node
High side gate drive output.
Low side gate drive output.
Power Ground
Output of the high voltage start-up
regulator. The VCC voltage is
regulated to 7.6V.
Synchronous rectifier driver
output.
Synchronous rectifier driver
output.
Output of 5V Reference
Input voltage source
Exposed Pad, underside of
package
No connection
No connection
No connection
No connection
Description
4
An external diode is required from VCC to HB and an external
capacitor is required from HS to HB to power the HO gate driver.
Connection common to the transformer and both power switches.
Provides a return path for the HO gate driver.
Output of the high side PWM gate driver. Capable of sinking 2A
peak current.
Output of the low side PWM gate driver. Capable of sinking 2A
peak current.
Connect directly to Analog Ground.
If an auxiliary winding raises the voltage on this pin above the
regulation setpoint, the Start-up Regulator will shutdown, thus
reducing the internal power dissipation.
Control output of the synchronous FET gate. Capable of 0.5A
peak current.
Control output of the synchronous FET gate. Capable of 0.5A
peak current.
Maximum output current is 20mA. Locally decoupled with a 0.1µF
capacitor.
Input to the Start-up Regulator. Operating input range is 13V to
100V with transient capability to 105V. For power sources outside
of this range, the LM5035B can be biased directly at VCC by an
external regulator.
No electrical contact. Connect to system ground plane for
reduced thermal resistance.
No electrical contact.
No electrical contact.
No electrical contact.
No electrical contact.
Application Information

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