mc9rs08la8 Freescale Semiconductor, Inc, mc9rs08la8 Datasheet - Page 24

• Manufacturer Part Number: mc9rs08la8
• Description: 8-bit Rs08 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

Electrical Characteristics
24
1
2
3
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
T
Data retention
L
PP
PP
Typicals are measured at 25 °C.
t
programmed more than twice before next erase.
Fast V
and cause permanent damage to the pad. External filtering for the V
filter is shown in
hv
to T
to PGM/MASS setup time
rise time
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
H
PP
= –40 °C to 85 °C
me
PP
rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
& t
3
hold time
hv
applied to device)
Figure
Characteristic
17.
2
Table 17. Flash Characteristics (continued)
MC9RS08LA8 Series MCU Data Sheet, Rev. 1
12 V
Figure 17. Example V
100 Ω
Symbol
t
hv_total
t
t
t
D_ret
t
t
t
t
t
nvh1
t
prog
t
t
t
pgs
nvh
vph
—
nvs
vps
me
vrs
rcv
hv
PP
PP
Filtering
1 nF
power source is recommended. An example V
1000
Min
500
100
200
V
20
10
20
20
15
—
—
5
5
1
PP
Typical
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Freescale Semiconductor
Max
40
—
—
—
—
—
—
—
—
—
—
—
8
2
cycles
hours
years
Unit
ms
ms
μs
μs
μs
μs
μs
ns
ns
ns
μs
PP