2sc5181-t1 Renesas Electronics Corporation., 2sc5181-t1 Datasheet

2sc5181-t1

Manufacturer Part Number

2sc5181-t1

Description

Npn Epitaxial Silicon Transistor In Ultra Super Mini-mold Package For Low-noise Microwave Amplification

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.2SC5181-T1.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SC5181-T1

Manufacturer:

NEC

Quantity:

51 000

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Document No. P12105EJ2V0DS00 (2nd edition)

(Previous No. TC-2478)

Date Published November 1996 N

Printed in Japan

FEATURES

• Low current consumption and high gain

• Ultra Super Mini-Mold package

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

2SC5181

2SC5181-T1

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

PART

NUMBER

* Contact your NEC sales representatives to order samples for

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

21e

evaluation (available in batches of 50).

= 10.5 dB

= 9.0 dB

50 units/box

3 000 units/reel

TYP.

QUANTITY

TYP.

@ V

FOR LOW-NOISE MICROWAVE AMPLIFICATION

= 1 V, I

= 2 V, I

Embossed tape, 8 mm wide, pin No. 3

(collector) facing the perforation

CBO

CEO

EBO

stg

= 5 mA, f = 2 GHz

= 7 mA, f = 2 GHz

DATA SHEET

ARRANGEMENT

–65 to +150

= 25 C)

150

SILICON TRANSISTOR

PACKAGE DIMENSIONS

PIN CONNECTIONS

(Units: mm)

2SC5181

1. Emitter

2. Base

3. Collector

1.6 ± 0.1

0.8 ± 0.1

1994

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