2sc5181-t1 Renesas Electronics Corporation., 2sc5181-t1 Datasheet - Page 3

• Manufacturer Part Number: 2sc5181-t1
• Description: Npn Epitaxial Silicon Transistor In Ultra Super Mini-mold Package For Low-noise Microwave Amplification
• Manufacturer: Renesas Electronics Corporation.

CHARACTERISTICS CURVES (T
200
100
25
20
15
10
15
10
0
5
0
5
f = 2 GHz
1
V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
CE
T
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER
1.0
– Collector to Emitter Voltage – V
A
I
– Ambient Temperature – °C
C
– Collector Current – mA
50
2
2.0
3
5
100
Passive air cooling
3.0
7 10
I
200 A
180 A
160 A
140 A
120 A
100 A
B
40 A
80 A
60 A
30 mW
= 20 A
V
V
A
CE
CE
= 25 C)
= 1 V
150
= 2 V
20
500
200
100
50
40
30
20
10
50
20
10
10
0
5
0
1
f = 2 GHz
V
CE
1
2
V
= 2 V
BE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
I
I
– Base to Emitter Voltage – V
C
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
– Collector Current – mA
– Collector Current – mA
2
5
V
CE
3
= 1 V
0.5
10
5
20
7 10
V
CE
2SC5181
V
= 2 V
50
CE
V
= 1 V
CE
100
= 2 V
20
1.0
3