2sc5181-t1 Renesas Electronics Corporation., 2sc5181-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc5181-t1
• Description: Npn Epitaxial Silicon Transistor In Ultra Super Mini-mold Package For Low-noise Microwave Amplification
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feedback Capacitance
FE
*1.
*2.
Marking
Class
Class
h
FE
PARAMETER
Measured with pulses: Pulse width
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
70 to 140
FB
84
SYMBOL
|S
|S
I
I
h
NF
NF
C
CBO
EBO
21e
21e
f
f
FE
T
T
re
|
|
2
2
MIN.
8.0
7.0
8.5
70
10
A
350 s, duty cycle
= 25 C)
TYP.
10.5
9.0
1.5
1.5
0.4
13
12
MAX.
100
100
140
2.0
2.0
0.6
UNIT
GHz
GHz
2 %, pulsed
nA
nA
dB
dB
dB
dB
pF
V
V
V
V
V
V
V
V
V
V
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
= 1 V, I
= 5 V, I
= 2 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
C
C
E
E
C
C
C
C
C
C
= 0
= 0
= 7 mA
= 7 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 3 mA, f = 2 GHz
= 7 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 0 mA, f = 1 MHz
CONDITIONS
*1
*2
2SC5181