2sc5173 TOSHIBA Semiconductor CORPORATION, 2sc5173 Datasheet - Page 2

• Manufacturer Part Number: 2sc5173
• Description: Toshiba Transistor Silicon Npn Triple Diffused Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Characteristics
C5173
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C unless otherwise noted.)
V
V
Symbol
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
CBO
EBO
C
f
T
ob
V
V
V
V
I
I
V
V
C
C
CB
EB
CE
CE
CE
CB
= 10 mA, I
= 10 mA, I
= 240 V, I
= 7 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 20 V, I
2
C
Test Condition
B
B
C
C
C
E
= 0
E
= 1 mA
= 1 mA
= 4 mA
= 20 mA
= 20 mA
= 0, f = 1 MHz
= 0
Min
20
30
50
―
―
―
―
―
Typ.
3.0
70
―
―
―
―
―
―
2006-11-10
2SC5173
Max
200
1.0
1.0
1.0
1.0
―
―
―
MHz
Unit
μA
μA
pF
V
V