2sc5173 TOSHIBA Semiconductor CORPORATION, 2sc5173 Datasheet - Page 4

• Manufacturer Part Number: 2sc5173
• Description: Toshiba Transistor Silicon Npn Triple Diffused Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
300
100
80
60
40
20
50
30
10
50
30
10
0
5
3
5
3
0.2
1
1
1
Common emitter
V CE = 10 V
I C max (continuous)
*: Single nonrepetitive pulse
Curves must be derated linearly with
increase in temperature.
I C max (pulsed)*
Ta = 25°C
Collector-emitter voltage V
Collector-base voltage V
3
0.4
Base-emitter voltage V
3
Ta = 100°C
5
Safe Operating Area
DC operation
Ta = 25°C
10
0.6
C
10
I
C
ob
– V
25
– V
30
BE
1 ms
CB
0.8
30
10 ms*
50
−25
100 ms*
BE
CB
CE
I E = 0
f = 1 MHz
Ta = 25°C
100
V CEO
(V)
500 ms*
max
1.0
100
(V)
(V)
300 μs*
300
300
500
1.2
4
500
300
100
100
2.0
1.6
1.2
0.8
0.4
0.5
0.3
0.1
50
30
10
50
30
10
0.001
0
0.3
5
3
1
1
0
25
0.01
Ambient temperature Ta (°C)
1
Curves should be applied in thermal limited
area. (single nonrepetitive pulse)
Ta = 25°C
Collector current I
50
Pulse width t
0.1
3
75
P
r
f
th
T
C
– I
1
– t
– Ta
C
100
w
w
10
C
V CE = 20 V
10
(s)
5
Common emitter
Ta = 25°C
(mA)
125
10
30
100
150
2006-11-10
2SC5173
1000
175
100