2sc5173 TOSHIBA Semiconductor CORPORATION, 2sc5173 Datasheet - Page 3

• Manufacturer Part Number: 2sc5173
• Description: Toshiba Transistor Silicon Npn Triple Diffused Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.05
120
100
500
300
100
0.5
0.3
0.1
80
60
40
20
50
30
10
0
0.3
5
3
1
0.3
0
Collector-emitter voltage V
4
1
1
Collector current I
Collector current I
Ta = 100°C
Ta = 100°C
25
8
−25
V
3
CE (sat)
3
I
h
C
FE
6
– V
12
– I
−25
4
CE
C
– I
10
10
C
C
C
Common emitter
Ta = 25°C
25
16
Common emitter
V CE = 10 V
Common emitter
I C /I B = 5
(mA)
(mA)
3
CE
I B = 0.2 mA
30
30
(V)
20
0.6
0.4
2
1
100
100
24
3
0.05
500
300
100
0.5
0.3
0.5
0.3
0.1
0.1
50
30
10
5
3
0.3
5
3
1
0.3
1
0.3
Common emitter
Ta = 25°C
1
1
1
Collector current I
Collector current I
Collector current I
I C /I B = 10
V
V
3
CE (sat)
3
3
BE (sat)
h
FE
– I
– I
C
– I
10
10
10
C
C
C
C
C
2
Common emitter
Ta = 25°C
Common emitter
I C /I B = 5
Ta = 25°C
5
(mA)
(mA)
(mA)
30
30
30
V CE = 20 V
10
5
2006-11-10
2SC5173
100
100
100