2sc3588-z GUANGDONG KEXIN INDUSTRIAL CO.,LTD, 2sc3588-z Datasheet

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2sc3588-z

Manufacturer Part Number

2sc3588-z

Description

Npn Silicon Triple Diffused Transistor

Manufacturer

GUANGDONG KEXIN INDUSTRIAL CO.,LTD

Datasheet

1.2SC3588-Z.pdf (1 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

2sc3588-z-E1

Manufacturer:

NEC

Quantity:

1 350

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

2sc3588-z-E1

Manufacturer:

NEC

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2sc3588-z-T1-AZ

Manufacturer:

TOSHIBA

Quantity:

3 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

2sc3588-z-T1-AZ

Manufacturer:

NEC

Quantity:

20 000

Current page: 1 of 1
Download datasheet (41Kb)

SMD Type

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current *1

Collector current

Total power dissipation

Junction temperature

Storage temperature

*1 pw 10ms,Duty cycle 50%

*2 when mounted on ceramic substrate of 7.5cm

Electrical Characteristics Ta = 25

Features

h

Absolute Maximum Ratings Ta = 25

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain *

Collector Saturation Voltage *

Base Saturation Voltage *

Turn-on Time

Storage Time

Fall Time

* Pulsed: PW 350ìA,Duty Cycle 2%

High voltage V

FE

Marking

hFE

Classification

CEO

Parameter

20 to 40

=400V

M

Parameter

NPN Silicon Triple Diffused Transistor

T

C

= 25 *2

30 to 60

L

2

40 to 80

Symbol

X0.7mm

V

V

I

CE(sat)

I

BE(sat)

h

CBO

EBO

t

t

stg

K

on

t

FE

r

2SC3588-Z

Symbol

V

V

V

T

I

P

CBO

CES

EBO

I

CP

T

V

V

V

V

I

I

I

P

Duty Cycle 2%

stg

C

C

C

C

T

j

CB

EB

CE

CE

W

=300mA,I

=300mA,I

=0.3A,R

=50ìs,I

=5.0V,I

=400V,I

=5V,I

=5V,I

C

C

L

=50mA

=300mA

B1

C

=500Ù,V

E

B

B

=0

Testconditons

-55 to +150

=0

=60mA

=60mA

=-I

Rating

B2

500

400

150

0.5

=0.06A

7

1

2

CC

=150V,

2.3

6.50

4.60

5.30

+0.15

-0.15

+0.15

-0.15

+0.2

-0.2

0.80

TO-252

+0.1

-0.1

Unit

0.60

W

V

V

V

A

A

+0.1

-0.1

0.127

max

0.50

Min

20

10

-0.7

+0.8

www.kexin.com.cn

2.30

Transistors

+0.1

-0.1

0.85

0.12

0.35

Typ

0.2

2.0

42

20

Max

0.5

1.0

1.0

2.5

1.0

10

10

80

Unit: mm

1 Base

2 Collector

3 Emitter

Unit

ìA

ìA

ìs

V

V

1

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