2sb736a GUANGDONG KEXIN INDUSTRIAL CO.,LTD, 2sb736a Datasheet
2sb736a
Manufacturer Part Number
2sb736a
Description
Pnp Silicon Epitaxial Transistor
Manufacturer
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
Datasheet
1.2SB736A.pdf
(1 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
2SB736A
Manufacturer:
NEC
Quantity:
20 000
Company:
Part Number:
2sb736a(0)-T1B-A
Manufacturer:
V3
Quantity:
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Manufacturer:
RENESAS/瑞萨
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Company:
Part Number:
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Manufacturer:
NEC
Quantity:
3 000
Part Number:
2sb736a(0)-T2B-A
Manufacturer:
NEC
Quantity:
20 000
Company:
Part Number:
2sb736a(0)-T2B-A
Manufacturer:
RENESAS
Quantity:
12 249
Company:
Part Number:
2sb736a-T1B
Manufacturer:
ATMEL
Quantity:
80
Part Number:
2sb736a-T1B
Manufacturer:
NEC
Quantity:
20 000
SMD Type
SMD Type
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Collector cutoff current
Emitter cutoff current
DC current gain *
Base to emitter voltage *
Collector saturation voltage *
Output capacitance
Gain bandwidth product
* Pulsed: PW
Micro package.
Complementary to 2SD780A.
High DC Current Gain: h
Features
Absolute Maximum Ratings Ta = 25
Electrical Characteristics Ta = 25
h
FE
Marking
h
Classification
FE
Parameter
350 µs, duty cycle
110 180
Parameter
B51
FE
= 200 TYP. (V
PNP Silicon Epitaxial Transistor
135 220
2%
B52
CE
= -1.0 V, I
Symbol
V
I
I
CE(sat)
V
h
C
CBO
EBO
f
170 270
C
Symbol
FE
BE
T
ob
2SB736A
V
V
V
= -50 mA)
T
P
B53
CBO
CEO
EBO
I
T
stg
C
T
j
V
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
CE
= -300 mA, I
= -50 V, I
= -5.0 V, I
= -1.0 V, I
= 6.0 V, I
= -6.0 V, I
= -6.0 V, I
-55 to +150
Rating
200 320
-300
-5.0
200
150
Testconditons
-80
-80
C
E
C
B54
C
E
E
B
= 0
= -10 mA
= 0
= 0 , f = 1.0 MHz
= 10 mA
= -50 mA
= -30 mA
250 400
mW
Unit
mA
V
V
V
B55
1
0.95
SOT-23
3
+0.1
-0.1
1.9
2.9
0.4
+0.1
-0.1
+0.1
-0.1
+0.1
-0.1
-600
110
Min
www.kexin.com.cn
Transistors
2
-0.35
-660
Typ
100
13
-100
-100
-700
Max
400
-0.6
1.Base
2.Emitter
3.collector
Unit: mm
IC
0.1
MHz
Unit
mV
nA
nA
+0.05
-0.01
pF
V
1
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