kta1504s-y GUANGDONG KEXIN INDUSTRIAL CO.,LTD, kta1504s-y Datasheet
kta1504s-y
Manufacturer Part Number
kta1504s-y
Description
Epitaxial Planar Pnp Transistor
Manufacturer
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
Datasheet
1.KTA1504S-Y.pdf
(1 pages)
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■ Features
● Collector Power Dissipation: P
● Collector Current: I
■ Absolute Maximum Ratings Ta = 25℃
■ Electrical Characteristics Ta = 25℃
SMD Type
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Parameter
C
Parameter
=-150mA
C
Epitaxial Planar PNP Transistor
=150mW
V
V
V
KTA1504S-Y
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
CBO
EBO
NF
h
f
Symbol
T
FE
ob
V
V
V
T
P
CEO
CBO
EBO
I
T
stg
C
C
j
I
I
I
V
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
CE
=-100μA,I
=-100μA,I
=-1mA,I
=-100mA, I
=-50V, I
=-5V, I
=-6V, I
=-10V, I
=-10V, I
=-6V, I
-55 to 150
B
C
C
C
=0
Rating
C
E
=0
=-2mA
=-0.1mA,f=1kHz, R
E
C
E
-150
150
150
=0
=0
-50
-50
=0
B
=-1mA
=0, f=1MHz
Test conditions
-5
=-10mA
Unit
mW
mA
℃
℃
V
V
V
g
=10KΩ
1
0.95
SOT-23
3
+0.1
-0.1
2.9
0.4
1.9
+0.1
-0.1
+0.1
-0.1
+0.1
-0.1
120
Min
www.kexin.com.cn
-50
-50
80
-5
Transistors
2
Typ
-0.1
4.0
1.0
Max
-0.1
-0.1
-0.3
240
7.0
10
1.Base
2.Emitter
3.collector
Unit: mm
0.1
MHz
Unit
μA
μA
+0.05
-0.01
dB
pF
V
V
V
V
1
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