2sd1007 GUANGDONG KEXIN INDUSTRIAL CO.,LTD, 2sd1007 Datasheet
2sd1007
Manufacturer Part Number
2sd1007
Description
Npn Silicon Epitaxial Transistor
Manufacturer
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
Datasheet
1.2SD1007.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1007
Manufacturer:
NEC
Quantity:
20 000
Company:
Part Number:
2sd1007-T1
Manufacturer:
NEC
Quantity:
130 000
Part Number:
2sd1007-T1
Manufacturer:
NEC
Quantity:
20 000
SMD Type
Base-emitter voltage *
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Output capacitance
Transition frequency
*. PW 350ìs,duty cycle 2%
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
Junction temperature
Storage temperature
*. PW 10ms,duty cycle 50%
h
Electrical Characteristics Ta = 25
High collector to emitter voltage: V
Features
Absolute Maximum Ratings Ta = 25
FE
Marking
hFE
Classification
Parameter
90 180
HR
Parameter
NPN Silicon Epitaxial Transistor
CEO
135 270
HQ
120V.
Symbol
V
V
200 400
I
I
CE(sat)
BE(sat)
V
C
h
CBO
EBO
f
FE
BE
ob
T
2SD1007
HP
Symbol
V
V
I
V
V
V
V
V
I
I
V
V
V
C (pu)
C
C
T
P
CE
CB
EB
CE
CE
CB
CE
CBO
CEO
EBO
I
T
stg
C
= 500mA , I
= 500mA , I
c
j
= 5V, I
=10V , I
= 120V, I
=1V , I
=1V , I
= 10V , I
= 10V , I
C
C
C
=0
C
Testconditons
= 5.0mA
= 100mA
E
E
E
-55 to +150
B
B
= 10mA
=0
= 0 , f = 1.0MHz
= -10mA
= 50mA
= 50mA
Rating
120
120
150
0.7
1.2
5
2
Unit
W
V
V
V
A
A
Min
550
45
90
www.kexin.com.cn
Transistors
Typ
620
200
200
0.3
0.9
10
90
Max
650
100
100
400
0.6
1.5
MHz
Unit
mV
nA
nA
pF
V
V
1