zxmn6a09dn8 Zetex Semiconductors plc., zxmn6a09dn8 Datasheet

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zxmn6a09dn8

Manufacturer Part Number
zxmn6a09dn8
Description
Dual 60v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Part Number
Manufacturer
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Price
Part Number:
zxmn6a09dn8TA
Manufacturer:
D1ODES
Quantity:
20 000
ZXMN6A09DN8
60V SO8 N-channel enhancement mode MOSFET
Summary
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A09D
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
Device
ZXMN6A09DN8TA
V
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOIC package
DC-DC converters
Power management functions
Disconnect switches
Motor control
(BR)DSS
60
0.060 @ V
0.040 @ V
R
DS(on)
GS
GS
Reel size
(inches)
( )
= 4.5V
= 10V
7
I
D
Tape width
5.6
4.6
(A)
(mm)
1
12
G1
Quantity
per reel
500
D1
S1
G2
G1
S2
S1
G2
Top view
www.zetex.com
D2
S2
D1
D1
D2
D2

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zxmn6a09dn8 Summary of contents

Page 1

... Low gate drive • SOIC package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A09DN8TA Device marking ZXMN 6A09D Issue 6 - January 2007 © Zetex Semiconductors plc 2007 I (A) D 5.6 4.6 Tape width (mm ...

Page 2

... For a device with two active die running at equal power. Issue 6 - January 2007 © Zetex Semiconductors plc 2007 Symbol (b) =10V; T =25°C GS amb (b) =10V; T =70°C GS amb (a) =10V; T =25°C GS amb (b) (c) (a)(d) (b)(e) (b)(d) Symbol 10 sec. 2 ZXMN6A09DN8 Limit Unit V 60 DSS V ± 5.6 D 4 mW/° ...

Page 3

... Characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09DN8 3 www.zetex.com ...

Page 4

... 0. 26.6 rr 300 s; duty cycle 2%. 4 ZXMN6A09DN8 Unit Conditions 250 60V =±20V 250 10V 8. 4.5V 7. 15V ...

Page 5

... Typical characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09DN8 5 www.zetex.com ...

Page 6

... V DS 90% 10 d(on (on) Switching time waveforms Issue 6 - January 2007 © Zetex Semiconductors plc 2007 t t d(off (on) Switching time test circuit 6 ZXMN6A09DN8 Current regulator 50k Same as 12V D.U D.U Gate charge test circuit www.zetex.com V DS ...

Page 7

... Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 6 - January 2007 © Zetex Semiconductors plc 2007 Millimeters DIM Min. Max. 1.35 1.75 e 0.10 0.25 b 4.80 5.00 c 5.80 6.20 3.80 4.00 h 0.40 1. ZXMN6A09DN8 Inches Millimeters Min. Max. Min. 0.050 BSC 1.27 BSC 0.013 0.020 0.33 0.008 0.010 0.19 0° 8° 0° 0.010 0.020 0. www.zetex.com Max. ...

Page 8

... Fax: (49 Fax: (1) 631 360 8222 europe.sales@zetex.com usa.sales@zetex.com © 2007 Published by Zetex Semiconductors plc Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09DN8 Asia Pacific Corporate Headquarters Zetex (Asia Ltd) Zetex Semiconductors plc 3701-04 Metroplaza Tower 1 Zetex Technology Park, Chadderton ...

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