zxmp3a16n8 Zetex Semiconductors plc., zxmp3a16n8 Datasheet

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zxmp3a16n8

Manufacturer Part Number
zxmp3a16n8
Description
30v P-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
zxmp3a16n8TA
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
zxmp3a16n8TC
Manufacturer:
ZETEX
Quantity:
20 000
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 2 - MAY 2007
DEVICE
ZXMP3A16N8TA
ZXMP3A16N8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Disconnect switches
Motor control
ZXMP
3A16
= -30V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.040
WIDTH
12mm
12mm
TAPE
QUANTITY
I
2500 units
PER REEL
500 units
D
= -6.7A
1
PINOUT
ZXMP3A16N8
Top View
SO8

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zxmp3a16n8 Summary of contents

Page 1

... APPLICATIONS • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMP3A16N8TA 7” 12mm ZXMP3A16N8TC 13” 12mm DEVICE MARKING • ZXMP 3A16 ISSUE 2 - MAY 2007 I = -6.7A D QUANTITY PER REEL 500 units 2500 units 1 ZXMP3A16N8 SO8 PINOUT Top View ...

Page 2

... ZXMP3A16N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V =-10V =-10V =-10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T =25°C (a) A Linear Derating Factor Power Dissipation at T =25° ...

Page 3

... Transient Thermal Impedance ISSUE 2 - MAY 2007 CHARACTERISTICS 2.0 1.6 1.2 0.8 0.4 100µs 0 100 10 Single Pulse D=0. 100 1k 100µ 1m Pulse Power Dissipation 3 ZXMP3A16N8 100 120 140 160 Temperature (°C) Derating Curve Single Pulse T =25°C amb 10m 100m 1 10 100 1k Pulse Width (s) ...

Page 4

... ZXMP3A16N8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) R Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... DS Output Characteristics 1.6 1.4 1.2 1.0 0.8 0 10V DS 0.4 3 -50 Tj Junction Temperature (°C) Normalised Curves v Temperature 100 T = 25° 3.5V 4V 0.1 10V 0.01 0.0 0 Source-Drain Diode Forward Voltage 5 ZXMP3A16N8 4V 3.5V 10V 3V 2. Drain-Source Voltage ( -10V -4. DS(on) V GS(th -250uA 100 150 T = 150° 25° ...

Page 6

... ZXMP3A16N8 ISSUE 2 - MAY 2007 6 ...

Page 7

... It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. ISSUE 2 - MAY 2007 ZXMP3A16N8 7 ...

Page 8

... ZXMP3A16N8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 E 3.80 4.00 0.150 0.157 L 0.40 1.27 0.016 0.050 © Zetex Semiconductors plc 2007 Europe Americas Zetex GmbH Zetex Inc ...

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