zxmp3a17dn8 Zetex Semiconductors plc., zxmp3a17dn8 Datasheet

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zxmp3a17dn8

Manufacturer Part Number
zxmp3a17dn8
Description
Dual P-channel 30v Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
zxmp3a17dn8TA
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
zxmp3a17dn8TC
Manufacturer:
ZETEX
Quantity:
20 000
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMP
3A17D
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMP3A17DN8TA
ZXMP3A17DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
= -30V; R
DS(ON)
REEL
13’‘
7
’‘
= 0.070 ; I
WIDTH
12mm
12mm
TAPE
D
QUANTITY
2500 units
PER REEL
= -4.4A
500 units
1
ZXMP3A17DN8
PINOUT
Top view
SO8

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zxmp3a17dn8 Summary of contents

Page 1

... Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMP3A17DN8TA 7 12mm ’‘ ZXMP3A17DN8TC 13’‘ 12mm DEVICE MARKING ZXMP 3A17D ISSUE 1 - OCTOBER 2005 = -4.4A D QUANTITY PER REEL 500 units 2500 units 1 ZXMP3A17DN8 SO8 PINOUT Top view ...

Page 2

... ZXMP3A17DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25° ...

Page 3

... Single Pulse D=0. 100 1k 100µ 1m Pulse Power Dissipation 3 ZXMP3A17DN8 Two active die 60 80 100 120 140 160 Temperature (°C) Derating Curve Single Pulse T =25°C amb One active die 10m 100m 1 10 100 1k Pulse Width (s) ...

Page 4

... ZXMP3A17DN8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... Junction Temperature (°C) Normalised Curves v Temperature T = 25° 150° 3.5V 0 10V 0.01 0.2 0 Source-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 5 ZXMP3A17DN8 10V 5V 4V 3. -10V -3. DS(on) V GS(th -250uA D 50 100 150 T = 25° ...

Page 6

... ZXMP3A17DN8 1000 800 600 C ISS C 400 OSS 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage TYPICAL CHARACTERISTICS -3. 1MHz RSS Gate-Source Voltage v Gate Charge -15V Charge (nC) ISSUE 1 - OCTOBER 2005 ...

Page 7

... The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 ZXMP3A17DN8 PACKAGE DIMENSIONS INCHES MILLIMETRES ...

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