zxm62n03g Zetex Semiconductors plc., zxm62n03g Datasheet

no-image

zxm62n03g

Manufacturer Part Number
zxm62n03g
Description
30v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
zxm62n03gTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Part Number:
zxm62n03gTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of High Density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
·
·
·
·
·
APPLICATIONS
·
·
·
·
ORDERING INFORMATION
DEVICE MARKING
·
ISSUE 1 - OCTOBER 2002
DEVICE
ZXM62N03GTA
ZXM62N03GTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
DC-DC Converters
Audio Output Stage
Relay and Soleniod driving
Motor Control
ZXM6
2N03
= 30V: R
DS(on)
REEL
SIZE
7”
13”
= 0.11 : I
TAPE
WIDTH
12mm
12mm
D
= 4.7A
QUANTITY
PER REEL
1000 units
4000 units
1
ZXM62N03G
Top View

Related parts for zxm62n03g

zxm62n03g Summary of contents

Page 1

... Audio Output Stage · Relay and Soleniod driving · Motor Control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXM62N03GTA 7” 12mm ZXM62N03GTC 13” 12mm DEVICE MARKING · ZXM6 2N03 ISSUE 1 - OCTOBER 2002 = 4.7A D QUANTITY PER REEL 1000 units 4000 units 1 ZXM62N03G Top View ...

Page 2

... ZXM62N03G ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C (a) A Linear Derating Factor Power Dissipation at T =25° ...

Page 3

... ISSUE 1 - OCTOBER 2002 ZXM62N03G 3 ...

Page 4

... ZXM62N03G ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... Normalised R 100 10 1 VGS=10V 0.1 10 100 0.2 Source-Drain Diode Forward Voltage 5 ZXM62N03G 10V VGS 5V 4. 100 V - Drain-Source Voltage (V) DS Output Characteristics RDS(on) VGS=10V ID=2.2A VGS=VDS ID=250uA VGS(th) - 100 150 200 Tj - Junction Temperature (°C) and V DS(on) GS(th) v Temperature T=150° ...

Page 6

... ZXM62N03G TYPICAL CHARACTERISTICS 900 800 700 600 500 400 300 200 100 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms 5 I =2.2A D Vgs=0V 4.5 f=1Mhz 4 Ciss 3.5 Coss 3 Crss 2.5 2 1 100 0 Gate-Source Voltage v Gate Charge Gate Charge Test Circuit ...

Page 7

... F 0.24 G NOM 4.6 H 0.85 K 0.02 L 6.7 M NOM 2.3 (3x) Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com 7 ZXM62N03G Inches Max Min Max 6.7 0.248 0.264 3.7 0.130 0.146 1.7 - 0.067 0.8 0.024 0.031 3.1 0.114 0.122 0.32 0.009 0.13 NOM 0.181 1 ...

Related keywords