zxm62n02e6tc Zetex Semiconductors plc., zxm62n02e6tc Datasheet

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zxm62n02e6tc

Manufacturer Part Number
zxm62n02e6tc
Description
20v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Part Number
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Part Number:
ZXM62N02E6TC
Manufacturer:
ZETEX
Quantity:
42 000
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - JUNE 2004
DEVICE
ZXM62N02E6TA
ZXM62N02E6TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
2N02
=20V; R
REEL SIZE
(inches)
DS(ON)
13
7
= 0.1
TAPE WIDTH (mm)
8mm embossed
8mm embossed
I
D
=3.2A
1
QUANTITY
PER REEL
3000 units
10000 units
ZXM62N02E6
SOT23-6
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zxm62n02e6tc Summary of contents

Page 1

... Low gate drive SOT23-6 package APPLICATIONS Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM62N02E6TA 7 ZXM62N02E6TC 13 DEVICE MARKING 2N02 ISSUE 1 - JUNE 2004 I =3.2A D TAPE WIDTH (mm) QUANTITY PER REEL 8mm embossed 3000 units 8mm embossed ...

Page 2

ZXM62N02E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T ...

Page 3

Refer Note ( 100ms 10ms 1ms 100us 0.1 0 Drain-Source Voltage (V) DS Safe Operating Area 80 Refer Note ( D=0.5 20 D=0.2 D=0.1 D=0.05 Single Pulse 0 0.0001 0.001 ...

Page 4

ZXM62N02E6 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay ...

Page 5

C 5V 4. 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 100 V =10V DS 10 T=150°C T=25°C 1 0.1 1 1 Gate-Source Voltage (V) GS Typical ...

Page 6

ZXM62N02E6 TYPICAL CHARACTERISTICS 900 800 700 600 500 400 300 200 100 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - JUNE 2004 5 I ...

Page 7

ZXM62N02E6 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 ...

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