zxmhc3a01t8 Zetex Semiconductors plc., zxmhc3a01t8 Datasheet

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zxmhc3a01t8

Manufacturer Part Number
zxmhc3a01t8
Description
Complementary 30v Enhancement Mode Mosfet H-bridge
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
zxmhc3a01t8TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
zxmhc3a01t8TA
Quantity:
1 000
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V
P-Channel = V
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DRAFT ISSUE E - APRIL 2004
DEVICE
ZXMHC3A01T8TA
ZXMHC3A01T8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Single SM-8 surface mount package
Single phase DC fan motor drive
ZXMH
C3A01
(BR)DSS
(BR)DSS
REEL
SIZE
13”
7”
= -30V : R
= 30V : R
WIDTH
12mm
12mm
TAPE
DS(on)
DS(on)
QUANTITY
4,000 units
1,000 units
PER REEL
= 0.21 ; I
= 0.12 ; I
D
D
1
= -2.3A
= 3.1A
G
G
D ,
2
1
1
ZXMHC3A01T8
D
2
S
S
2
1
S E M I C O N D U C T O R S
PINOUT
Top View
SM8
S
S
4
3
D ,
3
D
4
G
G
4
3

Related parts for zxmhc3a01t8

zxmhc3a01t8 Summary of contents

Page 1

... SIZE WIDTH ZXMHC3A01T8TA 7” 12mm ZXMHC3A01T8TC 13” 12mm DEVICE MARKING • ZXMH C3A01 DRAFT ISSUE E - APRIL 2004 = 0. 3.1A DS(on 0. -2.3A DS(on) D QUANTITY PER REEL 1,000 units 4,000 units 1 ZXMHC3A01T8 SM8 PINOUT ...

Page 2

... ZXMHC3A01T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (V = 10V 10V 10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) (a) (d) Power dissipation at T =25°C A Linear derating factor (b) (d) Power dissipation at T =25° ...

Page 3

... DRAFT ISSUE E - APRIL 2004 ZXMHC3A01T8 CHARACTERISTICS ...

Page 4

... ZXMHC3A01T8 N-channel ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (1) resistance (1) (3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) SWITCHING Turn-on-delay time Rise time ...

Page 5

... N-channel DRAFT ISSUE E - APRIL 2004 TYPICAL CHARACTERISTICS 5 ZXMHC3A01T8 ...

Page 6

... ZXMHC3A01T8 N-channel TYPICAL CHARACTERISTICS 6 DRAFT ISSUE E - APRIL 2004 ...

Page 7

... C 25.8 rss t 1.2 d(on 12.1 d(off) t 7.5 f 2 -0.85 -0. 300 s; duty cycle 2%. 7 ZXMHC3A01T8 -250 -30V =±20V -250 -10V -1. -4.5V -1. -15V ...

Page 8

... ZXMHC3A01T8 P-channel TYPICAL CHARACTERISTICS 8 DRAFT ISSUE E - APRIL 2004 ...

Page 9

... P-channel DRAFT ISSUE E - APRIL 2004 TYPICAL CHARACTERISTICS 9 ZXMHC3A01T8 ...

Page 10

... ZXMHC3A01T8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Typ. Min Max 0.067 A1 0.02 0.1 - 0.008 0.004 0 0.24 0.32 - 0.009 0.013 D 6.3 6.7 - 0.248 0.264 E 3.3 3.7 - 0.130 0.145 © Zetex Semiconductors plc 2004 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraß ...

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