ssm3k318t TOSHIBA Semiconductor CORPORATION, ssm3k318t Datasheet
ssm3k318t
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ssm3k318t Summary of contents
Page 1
... 1 4 off -2 DSF SSM3K318T +0.2 2.8-0.3 +0.2 1.6-0.1 １ ２ °C °C 1: Gate 2: Source TSM in 3: Drain the JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ.) Min Typ. ...
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... Usage Consideration Let V be the voltage applied between gate and source that causes the drain current (I th SSM3K318T). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate–source voltage V 300 Common Source Ta = 25°C 200 4.5 V 100 25 ° Ｖ − 25 ° 3.0 2.0 1.0 0 150 −50 Ambient temperature Ta (°C) 3 SSM3K318T I – 100 °C 25 °C − 25 °C 1.0 2.0 3.0 4.0 5.0 ( – (ON Drain current I (A) ...
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... G S 0.1 0.01 0.001 10 0 -0.2 Drain–source voltage V 1000 t off C iss t f 100 C oss C rss 100 0.01 ( SSM3K318T I – 100 °C −25 °C 25 °C -0.4 -0.6 -0.8 -1.0 -1.2 ( – Common Source 4 ° Ω ...
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... Ambient temperature Ta (°C) 5 SSM3K318T P – Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 0.8 mm × ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3K318T 2009-04-09 ...