ssm3k318t TOSHIBA Semiconductor CORPORATION, ssm3k318t Datasheet - Page 2

• Manufacturer Part Number: ssm3k318t
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Marking
Usage Consideration
SSM3K318T). Then, for normal switching operation, V
V
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
th.
Let V
Take this into consideration when using the device
(a) Test Circuit
This relationship can be expressed as: V
1
th
KDX
4.5 V
be the voltage applied between gate and source that causes the drain current (I
3
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
DD
IN
G
10 μs
: t
= 10 Ω
= 30 V
r
, t
2
f
< 5 ns
IN
Equivalent Circuit
V
DD
OUT
1
GS(off)
3
< V
(b) V
(c) V
GS(on)
th
< V
2
2
OUT
IN
GS(on).
(top view)
must be higher than V
V
DS (ON)
4.5 V
V
0 V
DD
th,
t
10%
on
and V
t
r
10%
90%
D
GS(off)
) to be low (1 mA for the
90%
t
off
t
SSM3K318T
must be lower than
f
2009-04-09