ssm3k318t TOSHIBA Semiconductor CORPORATION, ssm3k318t Datasheet - Page 4

• Manufacturer Part Number: ssm3k318t
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10
8
6
4
2
0
1000
0.03
0.01
100
300
100
0
0.3
0.1
30
10
0.001
30
10
3
3
1
1
0.1
Common Source
I D = 2.5A
Ta = 25°C
Common Source
V
Ta = 25 °C
Common
Source
Ta = 25 °C
f = 1 MHz
DS
= 5 V
Drain–source voltage V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
2
0.01
Drain current I
1
VDD=30V
C – V
|Y
fs
4
0.1
| – I
DS
D
D
10
DS
(A)
6
1
(V)
C rss
C iss
C oss
100
10
8
4
0.001
0.01
1000
0.1
100
10
10
1
1
0
0.01
t on
G
t r
t f
Common Source
V GS = 0 V
t off
Drain–source voltage V
S
-0.2
D
I
DR
100 °C
Drain current I
-0.4
0.1
25 °C
I
DR
t – I
-0.6
– V
D
DS
−25 °C
D
-0.8
1
DS
Common Source
V DD = 30 V
V GS = 0 to 4.5 V
Ta = 25 °C
R G = 10 Ω
SSM3K318T
(A)
(V)
-1.0
2009-04-09
-1.2
10