m52s32321a Elite Semiconductor Memory Technology Inc., m52s32321a Datasheet - Page 21

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m52s32321a

Manufacturer Part Number
m52s32321a
Description
512k X 32bit X 2banks Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
D Q
ESMT
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length =Full page
*Note: 1.Burst can’t end in full page mode, so auto precharge can’t issue.
Elite Semiconductor Memory Technology Inc.
C L O C K
A 1 0 / A P
A D D R
C L = 3
D Q M
C L = 2
C K E
RAS
CAS
WE
B A
CS
2.About the valid DQs after burst stop, it is same as the case of RAS interrupt.
3.Burst stop is valid at every burst length.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycle”.
R o w A c t i v e
( A - B a n k )
0
R A a
R A a
1
2
3
( A - B a n k )
R e a d
C A a
4
5
Q A a 0 Q A a 1
6
Q A a 0 Q A a 1
7
Q A a 2 Q A a 3 Q A a 4
B u r s t S t o p
8
Q A a 2 Q A a 3 Q A a 4
*Note2
9
H I G H
10
1
( A - B a n k )
R e a d
C A b
11
2
12
* N o t e 1
Q A b 0
13
Q A b 1
Q A b 0
14
Revision : 1.5
Publication Date : Jan. 2009
Q A b 2
Q A b 1
15
M52S32321A
Q A b 2
Q A b 3 Q A b 4 Q A b 5
16
P r e c h a r g e
( A - B a n k )
Q A b 3 Q A b 4 Q A b 5
17
18
1
: D o n ' t C a r e
21/29
19
2

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