STL7DN6LF3 ST Microelectronics, Inc., STL7DN6LF3 Datasheet

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STL7DN6LF3

Manufacturer Part Number
STL7DN6LF3
Description
These N-Channel STripFET& 8482; Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET& 8482; technology with a new gate structure. The resulting N-Channel STripFET& 8482; Pow
Manufacturer
ST Microelectronics, Inc.
Datasheet

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Part Number:
STL7DN6LF3
Manufacturer:
ST
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Features
1. The value is rated according to R
Applications
Description
This device is a dual N-channel enhancement
mode Power MOSFET produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
Table 1.
June 2012
This is information on a product in full production.
STL7DN6LF3
Logic level V
175 °C junction temperature
100% avalanche rated
Switching applications
Automotive
Order code
STL7DN6LF3
Order code
Dual N-channel 60 V, 35 mΩ typ., 6.5 A STripFET™ III Power
Device summary
GS(th)
MOSFET in PowerFLAT™ 5x6 double island package
V
60 V
DSS
thj-pcb
< 43 mΩ
R
max
DS(on)
7DN6LF3
Marking
6.5 A
Doc ID 023010 Rev 3
I
D
(1)
Figure 1.
PowerFLAT™ 5x6
double island
Package
PowerFLAT™ 5x6 double island
Internal schematic diagram
1
2
3
Top view
Datasheet — production data
STL7DN6LF3
4
Tape and reel
Packaging
www.st.com
1/14
14

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STL7DN6LF3 Summary of contents

Page 1

... I D max (1) < 43 mΩ 6.5 A thj-pcb Figure 1. Marking PowerFLAT™ 5x6 7DN6LF3 double island Doc ID 023010 Rev 3 STL7DN6LF3 Datasheet — production data PowerFLAT™ 5x6 double island Internal schematic diagram Top view Package Packaging Tape and reel 1/14 www.st.com ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 023010 Rev 3 STL7DN6LF3 ...

Page 3

... STL7DN6LF3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage DS V Gate-source voltage GS (1),(2) I Drain current (continuous Drain current (continuous (4) I Drain current (continuous (4) I Drain current (continuous (3),(4) I Drain current (pulsed Total dissipation at T ...

Page 4

... Test conditions V =25 V, f=1 MHz = = Figure 13 f=1 MHz open drain Parameter Test conditions V =TBD =4.7 Ω Figure 12 Doc ID 023010 Rev 3 STL7DN6LF3 Min. Typ 250 µ Min. Typ. Max. 432 - 93 10.5 = 6.5 A 8.8 - 2.1 1.9 - 6.3 Min. ...

Page 5

... STL7DN6LF3 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration= 300 µs, duty cycle 1.5% ...

Page 6

... T (°C) 125 J Doc ID 023010 Rev 3 Thermal impedance δ=0.5 0.2 0.1 0.05 0.02 0.01 Single pulse - Transfer characteristics I D ( Static drain-source on-resistance V =10V STL7DN6LF3 Zth_AM13007v1 1 ( AM13025v1 V (V) GS AM13026v1 I (A) D ...

Page 7

... STL7DN6LF3 Figure 8. Gate charge vs gate-source voltage Figure (V) V =30V =6. Figure 10. Normalized gate threshold voltage vs temperature V GS(th) I =250µA (norm) D 1.2 1.0 0.8 0.6 0.4 -75 -25 25 AM13027v1 (pF) 100 (nC) g Figure 11. Normalized on-resistance vs AM13014v1 R DS(on) (norm) 75 125 T (°C) J Doc ID 023010 Rev 3 ...

Page 8

... Figure 15. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 17. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 023010 Rev 3 STL7DN6LF3 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STL7DN6LF3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 023010 Rev 3 Package mechanical data ® ...

Page 10

... Package mechanical data Table 8. PowerFLAT™ 5x6 double island (ribbon) type B mechanical data Ref 10/14 Dimensions (mm) Min. Typ. 0.80 0.02 0.25 0.30 5.00 5.20 5.95 6.15 1.68 3.50 1.68 3.50 0.55 1.27 0.60 1.275 Doc ID 023010 Rev 3 STL7DN6LF3 Max. 1.00 0.05 0.50 5.40 6.35 1.88 3.70 1.88 3.70 0.75 0.80 1.575 ...

Page 11

... STL7DN6LF3 Figure 18. PowerFLAT™ 5x6 double island (ribbon) type B drawing Doc ID 023010 Rev 3 Package mechanical data Bottom view Side view Top view 8256945_Rev.D_ribbon 11/14 ...

Page 12

... Package mechanical data Figure 19. PowerFLAT™ 5x6 double island (ribbon) recommended footprint (dimensions are in mm) 12/14 Doc ID 023010 Rev 3 STL7DN6LF3 Footprint_ribbon ...

Page 13

... STL7DN6LF3 5 Revision history Table 9. Document revision history Date 28-Mar-2012 19-Jun-2012 26-Jun-2012 Revision 1 First release. Section 2.1: Electrical characteristics (curves) 2 Updated Section 4: Package mechanical data coverpage. 3 Document status promoted from preliminary to production data. Doc ID 023010 Rev 3 Revision history Changes has been added. and tile on the ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 023010 Rev 3 STL7DN6LF3 ...

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