STL7DN6LF3 ST Microelectronics, Inc., STL7DN6LF3 Datasheet - Page 3

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STL7DN6LF3

Manufacturer Part Number
STL7DN6LF3
Description
These N-Channel STripFET& 8482; Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET& 8482; technology with a new gate structure. The resulting N-Channel STripFET& 8482; Pow
Manufacturer
ST Microelectronics, Inc.
Datasheet

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STL7DN6LF3
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Electrical ratings
Table 2.
1. Specified by design. Not subject to production test.
2. Current is limited by bonding, with an R
3. Pulse width limited by safe operating area
4. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
5. Starting T
Table 3.
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
R
I
Symbol
DM
P
Symbol
I
R
E
D
thj-pcb
P
I
I
TOT
V
V
thj-case
T
AS
(1),(2)
D
D
I
T
I
(3),(4)
TOT
AV
GS
DS
stg
D
(4)
(4)
J
(5)
(4)
(1)
J
= 25 °C, I
Thermal resistance
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Total dissipation at T
Not-repetitive avalanche current
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal resistance junction-case
Thermal resistance junction-pcb
D
= 8 A, V
DD
= 25 V, per channel, 100% tested.
Doc ID 023010 Rev 3
C
pcb
Parameter
= 25°C
Parameter
= 25°C
thJC
= 2.9 °C/W the chip is able to carry 22 A at 25 °C.
C
C
pcb
pcb
= 25 °C
= 100 °C
=100 °C
= 25 °C
-55 to 175
Value
Value
±20
190
6.5
4.6
4.3
6.5
60
20
16
26
52
2.9
35
Electrical ratings
°C/W
°C/W
Unit
Unit
mJ
°C
W
W
V
V
A
A
A
A
A
A
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