STL7DN6LF3 ST Microelectronics, Inc., STL7DN6LF3 Datasheet - Page 4

• Manufacturer Part Number: STL7DN6LF3
• Description: These N-Channel STripFET& 8482; Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET& 8482; technology with a new gate structure. The resulting N-Channel STripFET& 8482; Pow
• Manufacturer: ST Microelectronics, Inc.

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
C
DS(on)
C
GS(th)
Q
Q
d(on)
d(off)
R
DSS
GSS
Q
oss
t
t
rss
iss
gs
gd
r
f
G
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage (V
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on-
resistance
Switching times
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
GS
Parameter
= 0)
= 0)
Doc ID 023010 Rev 3
V
V
V
V
Figure 13
f=1 MHz open drain
I
V
V
V
V
V
D
GS
GS
DS
DD
GS
GS
GS
DS
DS
= 250 µA
V
R
Figure 12
=0
=30 V, I
= V
= 10 V, I
= 5 V, I
=25 V, f=1 MHz,
=10 V
= 60 V
= ±20 V
DD
G
Test conditions
Test conditions
=4.7 Ω, V
Test conditions
=TBD, I
GS
, I
D
D
D
D
= 3 A
= 6.5 A
= 3 A
= 250 µA
D
= 3 A,
GS
=10 V
Min.
Min.
60
Min.
1
-
-
-
-
Typ.
Typ.
10.5
432
8.8
2.1
1.9
6.3
35
48
93
Typ.
TBD
TBD
TBD
TBD
STL7DN6LF3
Max.
Max.
±
Max.
100
43
60
-
-
-
1
3
-
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
mΩ
mΩ
µA
nA
Ω
ns
ns
ns
ns
V
V