hb288032c5 Renesas Electronics Corporation., hb288032c5 Datasheet - Page 52

• Manufacturer Part Number: hb288032c5
• Description: Compactflash? 256 Mbyte/192 Mbyte/160 Mbyte/128 Mbyte 96 Mbyte/64 Mbyte/32 Mbyte
• Manufacturer: Renesas Electronics Corporation.

HB288256/192/160/128/096/064/032C5
DC Characteristics-1 (Ta = 0 to +60˚C, V
Parameter
Input leakage current
Output voltage
Note:
Parameter
Input voltage
(CMOS)
Input voltage
(Schmitt trigger)
DC Characteristics-2 (Ta = 0 to +60˚C, V
Parameter
Sleep/standby
current
Sector read current I
Sector write current I
52
1. Except pulled up input pin.
Symbol Min
V
V
V
V
IL
IH
IL
IH
Symbol
I
I
I
SP1
CCR
CCR
CCW
CCW
(DC)
(Peak) 80
(DC)
(Peak) 80
Symbol
I
V
V
LI
3.3 V
—
2.4
—
—
OL
OH
32MB/64MB/
96MB/
128MB
Typ
0.5
40
45
Min
—
—
V
Typ
—
—
1.0
1.8
CC
Max
1.0
75
120
75
120
– 0.8 —
Max
0.6
—
—
—
160MB/192
MB/256MB/
0.7
40
80
45
80
Typ
—
—
Typ
CC
CC
Max
1.5
75
120
75
120
= 5 V 10%, 3.3 V 5%)
= 5.0 V 10%)
5 V
Min
—
4.0
—
—
Max
0.4
—
1
Unit Test conditions
mA
mA
mA
mA
mA
Typ
—
—
2.0
2.8
CMOS level (control signal = V
(In Memory card mode and I/O card
mode)
CMOS level (control signal = V
during sector read transfer
CMOS level (control signal = V
during sector write transfer
Unit
V
V
A
Test conditions
Vin = GND to V
I
I
OL
OH
Max
0.8
—
—
—
= 8 mA
= –8 mA
Unit Test conditions
V
V
V
V
CC
CC
CC
CC
– 0.2 V)
– 0.2 V)
– 0.2 V)
Note
1