mt8htf3264hdy Micron Semiconductor Products, mt8htf3264hdy Datasheet - Page 10

• Manufacturer Part Number: mt8htf3264hdy
• Description: Module Ddr2 512mb 200-sodimm
• Manufacturer: Micron Semiconductor Products

DRAM Operating Conditions
Table 9: Module and Component Speed Grades
DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Design Considerations
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Module Speed Grade
-1GA
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron's Web site. Module speed grades cor-
relate with component speed grades.
-80E
-800
-667
-53E
-40E
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Component Speed Grade
DRAM Operating Conditions
-187E
-25E
-37E
-25
-5E
-3
© 2006 Micron Technology, Inc. All rights reserved.