mt16htf25664az Micron Semiconductor Products, mt16htf25664az Datasheet
mt16htf25664az
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mt16htf25664az Summary of contents
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... DDR2 SDRAM UDIMM MT16HTF25664AZ – 2GB MT16HTF51264AZ – 4GB For component data sheets, refer to Micron’s Web site: Features • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC2-8500, PC2-6400, PC2- 5300, PC2-4200, or PC2-3200 • 2GB (256 Meg x 64), 4GB (512 Meg x 64) • ...
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... Module rank address Table 3: Part Numbers and Timing Parameters – 2GB Modules Base device: MT47H128M8, Module 2 Part Number Density MT16HTF25664AZ-1GA__ MT16HTF25664AZ-80E__ MT16HTF25664AZ-800__ MT16HTF25664AZ-667__ Table 4: Part Numbers and Timing Parameters – 4GB Modules Base device: MT47H256M8, Module 2 Part Number Density MT16HTF51264AZ-1GA__ MT16HTF51264AZ-80E__ MT16HTF51264AZ-800__ MT16HTF51264AZ-667__ Notes: 1. Data sheets for the base devices can be found on Micron’ ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF ...
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... V Supply Reference voltage: V REF V Supply Ground – No connect: These pins are not connected on the module. NF – No function: Connected within the module but provides no functionality. PDF: 09005aef83b82bc1/Source: 09005aef83b82ba5 HTF16C256_512x64AZ.fm - Rev. B 10/09 EN 2GB, 4GB (x64, DR): 240-Pin DDR2 SDRAM UDIMM 2 C bus bus. ...
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Functional Block Diagrams Figure 2: Functional Block Diagram S1# S0 DQS0 DQS0 DM0 DM CS# DQS DQS# DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 ...
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... General Description The MT16HTF25664AZ and MT16HTF51264AZ DDR2 SDRAM modules are high-speed, CMOS, dynamic random access 2GB and 4GB memory modules organized in a x64 con- figuration. These modules use 1Gb or 2Gb DDR2 SDRAM devices with eight internal banks. DDR2 SDRAM modules use double data rate architecture to achieve high-speed opera- tion ...
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... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the DRAM devices on the module. This is a stress rating only, and functional operation of the mod- ule at these or any other conditions outside those indicated in the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...
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... Micron encourages designers to simulate the signal characteristics of the system’s mem- ory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...
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... DD DD valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks in I DD2P 2. Value calculated reflects all module ranks in this operating condition. PDF: 09005aef83b82bc1/Source: 09005aef83b82ba5 HTF16C256_512x64AZ ...
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... DD DD valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks in I DD2P 2. Value calculated reflects all module ranks in this operating condition. PDF: 09005aef83b82bc1/Source: 09005aef83b82ba5 HTF16C256_512x64AZ ...
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Serial Presence-Detect Table 11: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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... R 0.8 (0.031) TYP 123.0 (4.84) TYP BACK VIEW U13 U14 U15 U16 5.0 (0.197) TYP 63.0 (2.48) TYP 12 Module Dimensions U7 U8 30.5 (1.2) 29.85 (1.175) 17.78 (0.7) TYP 10.0 (0.394) TYP PIN 120 U17 U18 PIN 121 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2009 Micron Technology, Inc. All rights reserved. ...