mt16vddt6464ay-40b Micron Semiconductor Products, mt16vddt6464ay-40b Datasheet

no-image

mt16vddt6464ay-40b

Manufacturer Part Number
mt16vddt6464ay-40b
Description
256mb, 512mb, 1gb, 2gb X64, Dr 184-pin Ddr Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR SDRAM UDIMM
MT16VDDT3264A – 256MB1
MT16VDDT6464A – 512MB
MT16VDDT12864A – 1GB
MT16VDDT25664A – 2GB1
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC-2100, PC-2700,
• 256MB (32 Meg x 64), 512MB (64 Meg x 64),
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 15.625µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
Table 1:
PDF: 09005aef80739fa5/Source:09005aef807397e5
DD16C32_64_128_256x64A.fm - Rev. D 3/08 EN
(UDIMM)
or PC-3200
1GB (128 Meg x 64), or 2GB (256 Meg x 64)
(-40B: V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
(256MB), 7.8125µs (512MB, 1GB, and 2GB)
maximum average periodic refresh interval
compatibility
Speed
Grade
DD
DDSPD
-262.
-26A
-40B
-335
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Nomenclature
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
Notes:
Q = +2.6V)
1. The values of
actual DDR SDRAM device specifications are 15ns.
256MB, 512MB, 1GB, 2GB (x64, DR) 184-Pin DDR SDRAM UDIMM
CL = 3
400
Data Rate (MT/s)
t
RCD and
CL = 2.5
333
333
266
266
266
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
1
CL = 2
266
266
266
266
200
Figure 1:
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. Not recommended for new designs.
module offerings.
t
(ns)
RCD
15
18
15
20
20
184-Pin UDIMM (MO-206 R/C B)
(ns)
t
15
18
15
20
20
RP
A
A
2
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
(ns)
t
55
60
60
65
65
RC
3
3
3
Marking
Features
Notes
None
-40B
-26A
-335
-262
-265
G
Y
1
I

Related parts for mt16vddt6464ay-40b

mt16vddt6464ay-40b Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 184-Pin UDIMM (MO-206 R ≤ +70°C) A ≤ +85° Contact Micron for industrial temperature module offerings ...

Page 2

... The data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16VDDT6464AY-40BG4. PDF: 09005aef80739fa5/Source:09005aef807397e5 DD16C32_64_128_256x64A.fm - Rev. D 3/08 EN ...

Page 3

... The data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16VDDT6464AY-40BG4. PDF: 09005aef80739fa5/Source:09005aef807397e5 DD16C32_64_128_256x64A.fm - Rev. D 3/08 EN ...

Page 4

DR) 184-Pin DDR SDRAM UDIMM Pin Assignments and Descriptions Table 7: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 ...

Page 5

... V Supply SSTL_2 reference voltage (V REF V Supply Ground – No connect: These pins are not connected on the module. PDF: 09005aef80739fa5/Source:09005aef807397e5 DD16C32_64_128_256x64A.fm - Rev. D 3/08 EN Pin Assignments and Descriptions 2 C bus. /2). DD Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 ©2004 Micron Technology, Inc. All rights reserved ...

Page 6

DR) 184-Pin DDR SDRAM UDIMM Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0 DM0 DM CS# DQS DQ DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

... Electrical Specifications Stresses greater than those listed in Table 9 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 9

... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 10

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80739fa5/Source:09005aef807397e5 DD16C32_64_128_256x64A.fm - Rev. D 3/08 EN ...

Page 11

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80739fa5/Source:09005aef807397e5 DD16C32_64_128_256x64A.fm - Rev. D 3/08 EN ...

Page 12

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80739fa5/Source:09005aef807397e5 DD16C32_64_128_256x64A.fm - Rev. D 3/08 EN ...

Page 13

... Operating bank interleave read current: Four device bank interleaving reads ( with auto precharge; and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks Value calculated reflects all module ranks in this operating condition. ...

Page 14

DR) 184-Pin DDR SDRAM UDIMM Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: ...

Page 15

... TYP 1.02 (0.04) TYP 120.65 (4.75) TYP Back view U13 U14 U15 U16 64.77 (2.55) TYP tive owners. Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 Module Dimensions U7 U8 31.9 (1.256) 31.6 (1.244) 17.78 (0.7) TYP Pin 92 U17 U18 10.0 (0.394) TYP Pin 93 3.8 (0.15) TYP ©2004 Micron Technology, Inc. All rights reserved. ...

Related keywords