k9f1g08u0m-y Samsung Semiconductor, Inc., k9f1g08u0m-y Datasheet - Page 18

• Manufacturer Part Number: k9f1g08u0m-y
• Description: 128m X 8 Bit / 64m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
Figure 5. Read Operation with CE don’t-care.
CLE
CE
WE
ALE
CE
WE
I/Ox
CLE
ALE
R/B
CE
WE
RE
I/Ox
t
00h
80h
CS
K9F1G16Q0M
K9F1G16D0M
Address(4Cycles)
Address(4Cycle)
t
WP
t
CH
30h
Data Input
t
R
18
I/O
CE
RE
0
~
7
CE don’t-care
t
CEA
Data Output(serial access)
t
REA
CE don’t-care
FLASH MEMORY
Data Input
out
10h