k9f1g08u0m-y Samsung Semiconductor, Inc., k9f1g08u0m-y Datasheet - Page 2

• Manufacturer Part Number: k9f1g08u0m-y
• Description: 128m X 8 Bit / 64m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Document Title
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
128M x 8 Bit / 64M x 16 Bit
Revision No
0.7
0.8
0.9
1.0
1.1
1.2
1.3
History
Errata is added.(Front Page)-K9F1GXXQ0M
Specification
Relaxed value
1. The 3rd Byte ID after 90h ID read command is don’t cared.
1. 2.65V device is added.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
AC parameters are changed-K9F1GXXQ0M
Before
After
Added Addressing method for program operation
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1. PKG(TSOP1, WSOP1) Dimension Change
The 5th Byte ID after 90h ID read command is deleted.
K9F1G16Q0M
K9F1G16D0M
tWC tWP tWH tRC tREH tRP tREA tCEA
45
80
25
60
tWC tWP tWH tRC tREH tRP tREA tCEA
45
80
15
20
25
60
50
80
15
20
15
20
NAND Flash Memory
50
80
25
60
15
20
30
60
2
25
60
45
75
30
60
45
75
FLASH MEMORY
Draft Date
Mar.17. 2003
Apr. 9. 2003
Jul. 2. 2003
Aug. 5. 2003
Jan. 27. 2004
Apr. 23. 2004
May. 24. 2004
Remark