m366s3354bts-c7a Samsung Semiconductor, Inc., m366s3354bts-c7a Datasheet - Page 14

• Manufacturer Part Number: m366s3354bts-c7a
• Description: Sdram Unbuffered Module 168pin Unbuffered Module Based On 512mb B-die 62/72-bit Non Ecc/ecc
• Manufacturer: Samsung Semiconductor, Inc.

M374S2953BTS (128M x 72, 1GB Module)
(Recommended operating condition unless otherwise noted, T
Notes : 1. Measured with outputs open.
DC CHARACTERISTICS
256MB, 512MB, 1GB Unbuffered DIMM
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
2. Refresh period is 64ms.
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE dV
CKE & CLK dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
CKE dV
CKE & CLK dV
CKE tV
Input signals are changed one time during 20ns
CKE tV
Input signals are stable
I
Page burst
4Banks activated
t
t
CKEd0.2V
RC
O
O
CCD
RC
= 0 mA
= 0 mA
tt
tt
= 2CLKs
RC
RC
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS tV
(min), CLK dV
(min), CS tV
(min), CLK dV
IL
IL
A
Test Condition
(max), t
(max), t
= 0 to 70qC)
CC
CC
= 10ns
= 10ns
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
=f
=f
CC
CC
CC
CC
= 10ns
= 10ns
=f
=f
Rev. 1.1 February 2004
Version
1,080
1,170
2,070
360
180
540
450
110
110
7A
36
36
54
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
SDRAM
Note
1
1
2