tpcp8406 TOSHIBA Semiconductor CORPORATION, tpcp8406 Datasheet - Page 4

• Manufacturer Part Number: tpcp8406
• Description: Mosfets Silicon P-/n-channel Mos U-mos?/u-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

6. 6. 6. 6. Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Note 7: If a reverse bias is applied between gate and source, this device enters V
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
source breakdown voltage is lowered in this mode.
Characteristics
(Note 7)
a a a a
= 25
= 25
= 25    unless otherwise specified)
= 25
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P/N
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
V
V
Symbol
R
(BR)DSS
(BR)DSX
DS(ON)
I
I
GSS
DSS
V
th
4
V
V
V
V
I
I
I
I
V
V
V
V
V
V
D
D
D
D
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
= -10 mA, V
= 10 mA, V
= -10 mA, V
= 10 mA, V
= ±20 V, V
= ±20 V, V
= -40 V, V
= 40 V, V
= -10 V, I
= 10 V, I
= -4.5 V, I
= -10 V, I
= 4.5 V, I
= 10 V, I
Test Condition
D
D
D
GS
GS
GS
D
D
GS
GS
D
GS
= 0.1 mA
= 3.0 A
DS
DS
= -0.1 mA
= 3.0 A
= -2.5 A
= -2.5 A
= 0 V
= -20 V
= 0 V
= 0 V
= 0 V
= 10 V
= 0 V
= 0 V
(BR)DSX
Min
-0.8
-40
-30
1.3
40
23








mode. Note that the drain-
Typ.
41
33
28
24










TPCP8406
2011-03-14
Max
±0.1
±0.1
53.4
43.2
-2.0
-10
2.3
10




36
32
Rev.2.0
Unit
mΩ
µA
µA
V
V
V