tpcp8406 TOSHIBA Semiconductor CORPORATION, tpcp8406 Datasheet - Page 6

• Manufacturer Part Number: tpcp8406
• Description: Mosfets Silicon P-/n-channel Mos U-mos?/u-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

7. 7. 7. 7. Marking
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Marking
Marking
Marking
Note 8: Ensure that the channel temperature does not exceed 150.
Reverse drain current
(pulsed)
Diode forward voltage
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Characteristics
(Note 8)
P-ch
N-ch
P-ch
N-ch
P/N
Symbol
a a a a
V
I
DRP
DSF
Fig.
Fig.
Fig.
Fig. 7.1
= 25
= 25
= 25
= 25    unless otherwise specified)
7.1
7.1
7.1 Marking

I
I
DR
DR
6
= -5 A, V
= 6 A, V
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Marking
Marking
Marking
Test Condition
GS
GS
= 0 V
= 0 V
Min




Typ.




TPCP8406
2011-03-14
Max
-1.2
-20
1.2
24
Rev.2.0
Unit
A
V