tpcp8601 TOSHIBA Semiconductor CORPORATION, tpcp8601 Datasheet

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tpcp8601

Manufacturer Part Number
tpcp8601
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
tpcp8601(TE85L
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
tpcp8601(TE85L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High-Speed Switching Applications
DC-DC Converter Applications
Strobo Flash Applications
Maximum Ratings
High DC current gain: h
Low collector-emitter saturation: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation (t = 10s)
Junction temperature
Storage temperature range
Note 1: Ensure that the junction temperature does not exceed 150°C during
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Note 3: ● on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
use of this device.
Characteristic
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Pulse (Note 1 )
DC (Note 1)
(Ta = 25°C)
t = 10s
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
f
Year of manufacture
(lowest-order digit of the calendar year)
FE
DC
= 35 ns (typ.)
= 200 to 500 (I
CE (sat)
Pc (Note 2)
Symbol
V
V
V
TPCP8601
T
I
CBO
CEO
EBO
I
CP
I
T
stg
C
B
j
C
= −0.19 V (max)
= −0.6 A)
−55 to 150
Rating
−4.0
−7.0
−0.5
−20
−20
150
3.3
1.3
−7
1
Unit
°C
°C
W
V
V
V
A
A
2
)
Weight: 0.017 g (typ.)
JEDEC
JEITA
TOSHIBA
0.475
1.Collector
2.Collector
3.Collector
4.Base
Figure 1.
Circuit Configuration
(Top View)
S
Figure 2. Marking
0.33±0.05
8
1
8  7  6   5
8
0.025
1  2  3  4
1
0.65
8601
2.9±0.1
0.17±0.02
7
2
0.05
5.Emitter
6.Collector
7.Collector
8.Collector
(weekly code)
S
M
Lot No.
6
3
5
4
(Note 3)
TPCP8601
2-3V1A
A
*
2004-12-10
B
4
5
0.28
1.12
1.12
0.28
A
0.8±0.05
+0.1
+0.13
+0.13
+0.1
-0.11
-0.11
0.05
-0.12
-0.12
Unit: mm
M
Type
B

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tpcp8601 Summary of contents

Page 1

... Rating Unit − CBO − CEO − EBO −4 −7 −0 3.3 Pc (Note 2) W 1.3 T 150 °C j −55 to 150 T °C stg 1 TPCP8601 Unit: mm 0.33±0. 0.475 0.05 M 0.65 2.9±0.1 A 0.8±0.05 S 0.025 S +0.1 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 0.28 5.Emitter -0.11 1.Collector 6.Collector 2 ...

Page 2

... See Figure 3 circuit diagram ∼ − Ω stg = −I = − VCC Output TPCP8601 Min Typ. Max Unit ⎯ ⎯ −100 nA ⎯ ⎯ −100 nA −20 ⎯ ⎯ V −20 ⎯ ⎯ V ⎯ 200 500 ⎯ ...

Page 3

... Common emitter − Single nonrepetitive pulse 10 −2.0 −2.4 0.001 (V) 10 Common emitter β Single nonrepetitive pulse −55°C 100 0.1 10 0.001 −1.6 (V) 3 TPCP8601 h – 0.01 0 Collector current −I ( – (sat 0.01 0 Collector current −I ...

Page 4

... Collector−emitter voltage − – Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 0 100 Pulse width t (s) w 100 μs* 100 (V) 4 TPCP8601 2 ) 1000 2004-12-10 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 TPCP8601 20070701-EN 2004-12-10 ...

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