tpcp8601 TOSHIBA Semiconductor CORPORATION, tpcp8601 Datasheet - Page 4

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tpcp8601

Manufacturer Part Number
tpcp8601
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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0.01
100
0.1
10
0.01
1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
These characteristic curves must
be derated linearly with increase
in temperature.
(Continuous)*
I C max (Pulse)*
Ta = 25°C
Collector−emitter voltage −V
I C max
2
).
1000
100
10
0.001
0.1
1
Safe operating area
10 s*
100 ms*
1
10 ms*
0.01
Ta = 25°C
operation
V CEO max
1 ms*
DC
10
CE
Curves apply only to limited areas of thermal resistance.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
0.1
100 μs*
(V)
Pulse width t
100
r
th
– t
1
4
w
w
(s)
10
100
2
1000
)
TPCP8601
2004-12-10

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