tpcp8601 TOSHIBA Semiconductor CORPORATION, tpcp8601 Datasheet - Page 2

• Manufacturer Part Number: tpcp8601
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Switching time
Figure 3. Switching Time Test Circuit & Timing Chart
I
B1
Duty cycle ＜1%
Characteristic
20μs
Rise time
Storage time
Fall time
I
B2
Input
I
(Ta = 25°C)
B2
I
B1
V
V
V
V
Symbol
h
h
VCC
(BR) CBO
(BR) CEO
CE (sat)
BE (sat)
I
I
FE
FE
CBO
EBO
t
stg
t
t
r
f
Output
(1)
(2)
V
V
I
I
V
V
I
I
See Figure 3 circuit diagram
V
I
C
C
C
C
B1
CB
EB
CE
CE
CC
= −1 mA, I
= −10 mA, I
= −2 A, I
= −2 A, I
2
= −I
= −7 V, I
= −20 V, I
= −2 V, I
= −2 V, I
∼ − 12 V, R
B2
Test Condition
= −67 mA
B
B
B
C
= −67 mA
= −67 mA
C
C
B
L
E
= 0
= 0
= −0.6 A
= −2.0 A
= 0
= 6 Ω
= 0
Min
−20
−20
200
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
170
72
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCP8601
2004-12-10
−0.19
−100
−100
−1.1
Max
500
⎯
⎯
⎯
⎯
⎯
⎯
Unit
nA
nA
ns
V
V
V
V