bso220n03mdg Infineon Technologies Corporation, bso220n03mdg Datasheet - Page 6

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bso220n03mdg

Manufacturer Part Number
bso220n03mdg
Description
Optimos 3 M-series Power- Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev.1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
40
35
30
25
20
15
10
DS
=f(T
5
0
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=7.7 A; V
20
10
98 %
GS
T
V
=10 V
j
DS
60
[°C]
typ
Coss
Ciss
[V]
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
2.5
1.5
0.5
10
10
10
=f(T
SD
2
1
0
-1
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
150 °C
0.5
DS
20
; I
D
=250 µA
V
T
SD
j
60
[°C]
1
[V]
25 °C, 98%
25 °C
BSO220N03MD G
100
1.5
150 °C, 98%
140
2008-07-08
180
2

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