km29w32000ait Samsung Semiconductor, Inc., km29w32000ait Datasheet - Page 2

• Manufacturer Part Number: km29w32000ait
• Description: 8-bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

4M x 8 Bit NAND Flash Memory
FEATURES
PIN CONFIGURATION
NOTE : Connect all V
KM29W32000AT, KM29W32000AIT
- Memory Cell Array : (4M + 128K)bit x 8bit
- Data Register
- Page Program : (512 + 16)Byte
- Block Erase
- Status Register
- Random Access
- Serial Page Access : 50ns(Min.)
- Program time
- Block Erase time : 2ms(typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
- Forward Type
Voltage Supply : 2.7V ~ 5.5V
Organization
Automatic Program and Erase
528-Byte Page Read Operation
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
Do not leave V
CLE
ALE
I/O0
I/O1
I/O2
I/O3
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
V
WE
WP
V
SS
SS
: (8K + 256)Byte
CC,
STANDARD TYPE
CC
: 250 s(typ.)
44(40) TSOP (II)
V
: (512 + 16)bit x8bit
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
or V
: 10 s(Max.)
CC
Q and V
SS
disconnected.
SS
pins of each device to power supply outputs.
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
V
CE
RE
R/B
SE
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
V
CC
CC
Q
2
The KM29W32000A is a 4M(4,194,304)x8bit NAND Flash
Memory with a spare 128K(131,072)x8bit. Its NAND cell pro-
vides the most cost-effective solution for the solid state mass
storage market. A program operation programs the 528-byte
page in typically 250 s and an erase operation can be per-
formed in typically 2ms on an 8K-byte block.
Data in the page can be read out at 50ns cycle time per byte.
The I/O pins serve as the ports for address and data input/out-
put as well as command inputs. The on-chip write controller
automates all program and erase system functions, including
pulse repetition, where required, and internal verify and margin-
ing of data. Even the write-intensive systems can take advan-
tage of the KM29W32000A extended reliability of one million
program/erase cycles by providing either ECC(Error Correction
Code) or real time mapping-out algorithm. These algorithms
have been implemented in many mass storage applications
and also the spare 16 bytes of a page combined with the other
512 bytes can be utilized by system-level ECC.
The KM29W32000A is an optimum solution for large nonvola-
tile storage application such as solid state storage, digital voice
recorder, digital still camera and other portable applications
requiring nonvolatility.
GENERAL DESCRIPTION
PIN DESCRIPTION
I/O0 ~ I/O7
Pin Name
V
CLE
ALE
V
R/B
V
N.C
WE
WP
CE
RE
SE
CC
CC
SS
Q
Data Inputs/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
Spare area Enable
Ready/Busy output
Power(2.7V ~ 5.5V)
Output Butter Power(2.7V ~ 5.5V)
Ground
No Connection
FLASH MEMORY
Pin Function