upa2721gr-e2 Renesas Electronics Corporation., upa2721gr-e2 Datasheet

upa2721gr-e2

Manufacturer Part Number

upa2721gr-e2

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2721GR-E2.pdf (6 pages)

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Document No. G17444EJ1V0DS00 (1st edition)

Date Published July 2005 NS CP(K)

Printed in Japan

FEATURES

• Low on-state resistance

• Low C

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external electrode and other parts.)

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

designed for power management applications of notebook

computers and Li-ion battery protection circuit.

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Notes 1. PW ≤ 10

The

DS(on)1

DS(on)2

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

PA2721GR is N-channel MOS Field Effect Transistor

iss

PA2721GR-E1

PA2721GR-E1-A

PA2721GR-E2

PA2721GR-E2-A

= 4.3 mΩ MAX. (V

= 6.3 mΩ MAX. (V

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

: C

PART NUMBER

iss

= 5100 pF TYP. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

Note

Note2

= 0 V)

= 10 V, I

= 4.5 V, I

N-CHANNEL POWER MOSFET

= 10 V, V

Note2

= 10 A)

Power SOP8

PACKAGE

= 25°C, All terminals are connected.)

DATA SHEET

= 0 V)

D(pulse)

SWITCHING

D(DC)

DSS

GSS

stg

MOS FIELD EFFECT TRANSISTOR

–55 to +150

±150

±20

±19

150

1.1

2.5

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

°C

0.40

1.27

+0.10

–0.05

0.78 MAX.

PA2721GR

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8: Drain

0.5 ±0.2

6.0 ±0.3

4.4

: Source

: Gate

Source

Drain

Body

Diode

0.8

0.10

2005

Related parts for upa2721gr-e2

upa2721gr-e2 Summary of contents

Page 1

N-CHANNEL POWER MOSFET DESCRIPTION The µ PA2721GR is N-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance R = 4.3 mΩ MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

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upa2721gr-e2 Renesas Electronics Corporation., upa2721gr-e2 Datasheet

upa2721gr-e2

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