upa2721gr-e2 Renesas Electronics Corporation., upa2721gr-e2 Datasheet - Page 2

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upa2721gr-e2

Manufacturer Part Number
upa2721gr-e2
Description
Switching N-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
ELECTRICAL CHARACTERISTICS (T
Note Pulsed
2
V
0
TEST CIRCUIT 1 SWITCHING TIME
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
τ = 1 s
Duty Cycle ≤ 1%
PG.
µ
τ
CHARACTERISTICS
R
G
D.U.T.
Note
Note
R
V
L
DD
Note
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
V
V
| y
V
V
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
GSS
V
DSS
t
GS
DS
t
t
oss
rss
GS
GD
rr
A
fs
iss
r
f
0
0
DS
G
rr
|
= 25°C, All terminals are connected.)
10%
t
90%
d(on)
Data Sheet G17444EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
t
D
F
F
on
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 19 A
= 19 A, V
= 19 A, V
10% 10%
t
= 10 Ω
r
= 30 V, V
=
= 10 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V
= 0 V
= 15 V, I
= 10 V
= 15 V
= 5 V
±
V
20 V, V
GS
t
d(off)
TEST CONDITIONS
GS
GS
D
D
t
D
D
D
off
GS
µ
90%
= 1 mA
= 10 A
= 0 V
= 0 V
= 10 A
= 10 A
s
DS
= 10 A
90%
t
= 0 V
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
1.0
12
I
G
50 Ω
= 2 mA
5100
1050
TYP.
690
113
3.4
4.6
0.8
23
40
51
51
13
24
48
52
D.U.T.
µ
PA2721GR
MAX.
±
2.5
4.3
6.3
1
10
R
V
UNIT
L
DD
mΩ
mΩ
µ
µ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A

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