upa2721gr-e2 Renesas Electronics Corporation., upa2721gr-e2 Datasheet - Page 3

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upa2721gr-e2

Manufacturer Part Number
upa2721gr-e2
Description
Switching N-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
TYPICAL CHARACTERISTICS (T
80
70
60
50
40
30
20
10
120
100
0
80
60
40
20
0
0
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
V
20
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
GS
0.1
T
- Drain to Source Voltage - V
1000
= 10 V
A
0.01
40
100
- Ambient Temperature -
0.1
10
1
100
60
0.2
µ
80
0.3
100
1 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
4.5 V
A
120
= 25°C)
0.4
Pulsed
˚C
T
Single pulse
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
10 m
140
A
= 25°C
0.5
Data Sheet G17444EJ1V0DS
160
PW - Pulse Width - s
100 m
1
1000
0.01
100
0.01
0.1
100
10
0.1
10
1
0.01
1
FORWARD BIAS SAFE OPERATING AREA
FORWARD TRANSFER CHARACTERISTICS
0
T
Single pulse
Mounted on glass epoxy board
of 1 inch x 1 inch x 0.8 mm
10
A
= 25°C
V
R
T
DS
th(ch-A)
V
ch
GS
- Drain to Source Voltage - V
1
0.1
= − 55°C
- Gate to Source Voltage - V
150°C
= 114°C/W
25°C
75°C
100
I
D(DC)
2
1
I
D(pulse)
1000
3
10
µ
V
Pulsed
DS
PA2721GR
4
= 10 V
100
5
3

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