k4x56163pe-lg Samsung Semiconductor, Inc., k4x56163pe-lg Datasheet - Page 21

• Manufacturer Part Number: k4x56163pe-lg
• Description: 16m X16 Mobile Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

*Note : 1. The row active command of the precharge bank can be issued after t
Write with Auto Precharge
If A10 is high when write command is issued , the write with auto-precharge function is performed. Any new command to the same
bank should not be issued until the internal precharge is completed. The internal precharge begins after keeping tWR(min).
K4X56163PE-L(F)G
Command
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same bank is illegal
< Burst Length=4 >
CK, CK
DQS
DQs
BANK A
ACTIVE
0
NOP
1
NOP
Figure 15. Write with auto precharge timing
2
NOP
3
Auto Precharge
WRITE A
4
Din 0 Din 1 Din 2 Din 3
NOP
21
5
RP
NOP
from this point.
6
NOP
7
t
WR
Mobile-DDR SDRAM
NOP
Internal precharge start
8
NOP
* Bank can be reactivated at
9
completion of
NOP
10
t
*1
RP
t
RP
March 2004
NOP
11