SPB80N06S-08_05 INFINEON [Infineon Technologies AG], SPB80N06S-08_05 Datasheet
SPB80N06S-08_05
Related parts for SPB80N06S-08_05
SPB80N06S-08_05 Summary of contents
Page 1
... = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 55 (SMD version) 7.7 80 Green Package PG-TO220-3 Value Unit 320 700 kV/µs ±20 V ...
Page 2
... =150 ° = GSS = =80 A DS( SMD version |V |>2 DS(on)max = page 2 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Values min. typ. max. - 0.38 0 2 100 = 100 - 6 ...
Page 3
... V =27 /dt =100 A/µ =0.5 K/W the chip is able to carry 132A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Values min. typ. max. - 3660 = 1075 - 540 - =2.4 ...
Page 4
... C 100 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 100 µ 100 [V] page 4 SPB80N06S-08 SPI80N06S-08, SPP80N06S- = 100 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - ...
Page 5
... 5 4 [V] 8 Typ. forward transconductance g =f ° [V] page 5 SPB80N06S-08 SPI80N06S-08, SPP80N06S- =25 ° 4 [ =25 ° [ 5 6 ...
Page 6
... V DS Rev. 1.0 10 Typ. gate threshold voltage V =f(T GS(th) parameter 3.5 3 2.5 2 1.5 1 0.5 100 140 180 12 Forward characteristics of reverse diode I =f parameter: T Crss 30 40 [V] page 6 SPB80N06S-08 SPI80N06S-08, SPP80N06S- µA 1200 µA 240 -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] ...
Page 7
... Drain-source breakdown voltage V BR(DSS 100 120 140 [nC] page 7 SPB80N06S-08 SPI80N06S-08, SPP80N06S- = 100 150 T [° =250 µ -60 - 100 T [° ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 SPI80N06S-08, SPP80N06S-08 page 8 SPB80N06S-08 2005-06-28 ...