CM1400DU-24NF_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM1400DU-24NF_09 Datasheet - Page 4

• Manufacturer Part Number: CM1400DU-24NF_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
10
10
10
10
10
10
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
3
2
1
10
1
0
3
2
1
0
10
10
2
–3
Single Pulse
IGBT part:
Per unit base = R
FWDi part:
Per unit base = R
2
t
T
point is just
under the chips
E
r
SWITCHING CHARACTERISTICS
IMPEDANCE CHARACTERISTICS
C
2 3 5 7
rr
measured
COLLECTOR CURRENT I
2
2
(IGBT part & FWDi part)
TRANSIENT THERMAL
10
3
3
–2
E
HALF-BRIDGE
2 3 5 7
t
off
f
5 7
5 7
(TYPICAL)
(TYPICAL)
TIME (s)
th(j–c’)
th(j–c’)
I
C
E
I
C
10
10
-E
10
10
on
(A)
3
–1
–5
SW
3
= 0.014K/ W
= 0.023K/ W
2 3 5 7
2 3 5 7
t
t
d(off)
d(on)
Conditions:
V
V
T
R
Inductive load
2
2
Conditions:
V
V
R
T
Inductive load
CC
GE
j
G
j
CC
GE
G
= 125°C
= 125°C
= 0.22Ω
10
10
3
3
= 0.22Ω
= 600V
= ±15V
= 600V
= ±15V
0
–4
C
2 3 5 7
2 3 5 7
(A)
5 7
5 7
10
10
10
10
10
10
10
4
3
2
7
5
3
2
7
5
3
2
–3
1
4
–1
–2
–3
4
10
10
10
10
10
10
20
16
12
REVERSE RECOVERY CHARACTERISTICS
8
4
0
3
7
5
3
2
2
7
5
3
2
1
7
5
3
2
7
5
3
2
10
3
2
1
0
0
I
2
C
= 1400A
2
2000
EMITTER CURRENT I
0.5
OF FREE-WHEEL DIODE
GATE CHARGE Q
3
CHARACTERISTICS
HIGH POWER SWITCHING USE
GATE CHARGE
5 7
4000
MITSUBISHI IGBT MODULES
(TYPICAL)
(TYPICAL)
(TYPICAL)
V
1
CC
R
R
CM1400DU-24NF
G
10
G
-E
= 400V
(Ω)
3
SW
6000
1.5
t
I
rr
rr
Conditions:
V
V
T
I
Inductive load
Conditions:
V
V
R
T
Inductive load
2
C
j
j
G
CC
GE
CC
GE
V
G
= 125°C
= 125°C
= 1400A
CC
(nC)
= 0.22Ω
3
E
8000 10000
= 600V
= ±15V
= 600V
= ±15V
(A)
2
= 600V
5 7
E
E
E
on
off
rr
10
2.5
4
Feb. 2009