GB15XP120KPBF VISHAY [Vishay Siliconix], GB15XP120KPBF Datasheet
GB15XP120KPBF
Manufacturer Part Number
GB15XP120KPBF
Description
Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.GB15XP120KPBF.pdf
(10 pages)
Document Number: 93913
Revision: 03-Aug-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
(including diode and IGBT)
V
CE(on)
t
I
C
sc
typical at V
at T
at T
V
C
J
CES
= 100 °C
= 150 °C
GE
1200 V NPT IGBT and HEXFRED
Three Phase Inverter Module in MTP Package
= 15 V
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
MTP
For technical questions within your region, please contact one of the following:
> 10 μs
1200 V
SYMBOL
2.51 V
15 A
V
V
V
I
I
I
P
ISOL
CES
CM
LM
FM
I
I
GE
C
F
D
T
T
T
Any terminal to case, t = 1 min
T
T
C
C
C
C
C
= 25 °C
= 100 °C
= 100 °C
= 25 °C
= 100 °C
TEST CONDITIONS
FEATURES
• Generation 5 NPT 1200 V IGBT technology
• HEXFRED
• Very low conduction and switching losses
• Optional SMT thermistor (NTC)
• Aluminum oxide DBC
• Very low stray inductance design for high speed operation
• Short circuit 10 μs
• Square RBSOA
• Operating frequencies 8 kHz to 60 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for inverter motor drive applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
recovery
DiodesEurope@vishay.com
®
®
diode with ultrasoft reverse
Diodes, 15 A
Vishay Semiconductors
GB15XP120KTPbF
MAX.
1200
2500
± 20
187
30
15
60
60
15
30
75
www.vishay.com
UNITS
W
V
A
V
1
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