GB15XP120KPBF VISHAY [Vishay Siliconix], GB15XP120KPBF Datasheet - Page 6

• Manufacturer Part Number: GB15XP120KPBF
• Description: Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A
• Manufacturer: VISHAY [Vishay Siliconix]

GB15XP120KTPbF
Vishay Semiconductors
www.vishay.com
6
160
120
80
40
50
40
30
20
10
Fig. 16 - Typical Diode Forward Characteristics
0
0
0
0
Fig. 15 - Typical Transfer Characteristics
V
4
1
CE
= 50 V; t
t
Tj = 25°C
Tj = 125°C
Vge (V)
[e-mail], [e-mail],
p
Tj = 25°C
Tj = 125°C
Vf (V)
= 80 μs
For technical questions within your region, please contact one of the following:
8
2
p
= 10 μs
12
1200 V NPT IGBT and HEXFRED
3
Three Phase Inverter Module in MTP Package
Fig. 19 - Typical Diode I
45
40
35
30
25
20
15
400
16
V
4
GE
550
= 15 V; I
700
dif/dt (A/µs)
CE
= 10 A, T
850
rr
vs. dI
1000
F
J
/dt; V
= 125 °C
1150
CC
55
45
35
25
15
45
40
35
30
25
20
15
[e-mail]
5
= 600 V;
5
0
1300
®
Fig. 18 - Typical Diode I
Fig. 17 - Typical Diode I
10
Diodes, 15 A
10
T
J
= 125 °C; I
15
T
J
20
= 125 °C
Rg ( )
If (A)
20
Rg=4.7 Ω
F
30
= 10 A
25
Document Number: 93913
rr
rr
vs. R
vs. I
40
Revision: 03-Aug-10
30
Rg= 22Ω
Rg=47 Ω
Rg=
F
g
10
Ω
35
50