FM24CL16B-DG RAMTRON [Ramtron International Corporation], FM24CL16B-DG Datasheet

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FM24CL16B-DG

Manufacturer Part Number
FM24CL16B-DG
Description
16Kb Serial 3V F-RAM Memory
Manufacturer
RAMTRON [Ramtron International Corporation]
Datasheet

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FM24CL16B-DG
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Preliminary
FM24CL16B
16Kb Serial 3V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Fast Two-wire Serial Interface
Description
The FM24CL16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by EEPROM
and other nonvolatile memories.
The FM24CL16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array in the cycle after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM24CL16B is capable of
supporting 10
more write cycles than EEPROM.
These capabilities make the FM24CL16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where a long write time
can cause data loss. The combination of features
allows the system to write data more frequently, with
less system overhead.
The FM24CL16B provides substantial benefits to
users of serial EEPROM, yet these benefits are
available in a hardware drop-in replacement. The
FM24CL16B is available in an industry standard 8-
pin SOIC package and uses a familiar two-wire
protocol. The specifications are guaranteed over the
industrial temperature range from -40°C to +85°C.
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.4
Feb. 2011
Organized as 2,048 x 8 bits
High Endurance 10
38 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Up to 1MHz Maximum Bus Frequency
Direct Hardware Replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
14
read/write cycles, or a million times
14
Read/Writes
Low Power Operation
Industry Standard Configuration
Pin Configuration
Pin Names
SDA
SCL
WP
VDD
VSS
Ordering Information
FM24CL16B-G
FM24CL16B-GTR
FM24CL16B-DG
FM24CL16B-DGTR
2.7 - 3.65V Operation
100 µA Active Current (100 kHz)
3 µA (typ.) Standby Current
Industrial Temperature -40° C to +85° C
8-pin “Green”/RoHS SOIC and TDFN Packages
VSS
NC
NC
NC
1850 Ramtron Drive, Colorado Springs, CO 80921
VSS
NC
NC
NC
Function
Serial Data/Address
Serial Clock
Write Protect
Supply Voltage
Ground
1
2
3
4
Top View
1
2
3
4
Ramtron International Corporation
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
“Green”/RoHS 8-pin TDFN
“Green”/RoHS 8-pin TDFN,
Tape & Reel
(800) 545-FRAM, (719) 481-7000
8
7
6
5
8
7
6
5
VDD
WP
SCL
SDA
www.ramtron.com
VDD
WP
SCL
SDA
Page 1 of 13

Related parts for FM24CL16B-DG

FM24CL16B-DG Summary of contents

Page 1

... SOIC FM24CL16B-GTR “Green”/RoHS 8-pin SOIC, Tape & Reel FM24CL16B-DG “Green”/RoHS 8-pin TDFN FM24CL16B-DGTR “Green”/RoHS 8-pin TDFN, Tape & Reel Ramtron International Corporation 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 www ...

Page 2

... Write Protect: When WP is high, the entire array is write-protected. When WP is low, all addresses may be written. This pin is internally pulled down. VDD Supply Supply Voltage VSS Supply Ground connect Rev. 1.4 Feb. 2011 Address Latch Converter Figure 1. Block Diagram FM24CL16B - 16Kb 3V I2C F-RAM 256 x 64 FRAM Array 8 Data Latch Page ...

Page 3

... Overview The FM24CL16B is a serial FRAM memory. The memory array is logically organized as a 2,048 x 8 memory array and is accessed using an industry standard two-wire interface. Functional operation of the FRAM is similar to serial EEPROMs. The major difference between the FM24CL16B and a serial EEPROM with the same pinout relates to its superior write performance ...

Page 4

... Stop. Slave Address The first byte that the FM24CL16B expects after a Start condition is the slave address. As shown in Figure 4, the slave address contains the device type, the page of memory to be accessed, and a bit that specifies if the transaction is a read or a write ...

Page 5

... All data transfer occurs MSB (most significant bit) first. Rev. 1.4 Feb. 2011 Memory Operation The FM24CL16B is designed to operate in a manner very similar to other 2-wire interface memory products. The major differences result from the A0 R/W higher performance write capability of FRAM technology ...

Page 6

... ID specify the block of memory that is used for the read operation. On the next clock, the FM24CL16B will begin shifting out data from the current address. The current address is the 3 bits from the slave ID combined with the 8 bits that were in the internal address latch ...

Page 7

... Acknowledge 1 A Data Byte A Acknowledge Data Figure 8. Sequential Read Start Address Word Address A S Slave Address 1 Acknowledge Figure 9. Selective (Random) Read FM24CL16B - 16Kb 3V I2C F-RAM No Acknowledge Stop Acknowledge Data Byte 1 P Acknowledge Acknowledge A Data Byte A Data Byte Data Page ...

Page 8

... DD Min 2 other inputs -0.3V Stop command issued FM24CL16B - 16Kb 3V I2C F-RAM Ratings -1.0V to +5.0V -1.0V to +5.0V and V < V +1. -55° 125°C 260° C 4kV 1.25kV 300V MSL-1 Typ Max Units Notes 3.3 3.65 V 100 µ ...

Page 9

... DD Max Units Notes 2.7V to 3.65V unless otherwise specified) DD min) DD waveform. DD FM24CL16B - 16Kb 3V I2C F-RAM Max Min Max Units Notes 400 0 1000 kHz 1 0.6 µs 0.4 µs 0.9 0.55 µs 0.5 µs 0.25 µs 0.25 µ 100 ns 300 300 ...

Page 10

... HIGH 1/f SCL t AA Stop Start t HD:DAT t t SU:DAT HD:STA Stop Start Min FM24CL16B - 16Kb 3V I2C F-RAM Equivalent AC Load Circuit 3.6V 1100 Ω Output 100 LOW t HD:DAT t SU:DAT t DH Acknowledge t AA Acknowledge Max Units Notes - Years - ...

Page 11

... XXXXXX= part number, P= package type (G=SOIC) R=rev code, LLLLLLL= lot code XXXXXXXP RIC=Ramtron Int’l Corp, YY=year, WW=work week RLLLLLLL RICYYWW Example: FM24CL16B, “Green” SOIC package, Year 2010, Work Week 49 FM24CL16BG A00002G1 RIC1049 Rev. 1.4 Feb. 2011 FM24CL16B - 16Kb 3V I2C F-RAM ...

Page 12

... TDFN Package Marking Scheme for Body Size 4.0mm x 4.5mm Legend: R=Ramtron, XXXXX=base part number RXXXXX LLLL= lot code, LLLL YY=year, WW=work week YYWW Example: “Green” TDFN package, FM24CL16B, Lot 0003, Industrial temperature, Year 2011, Work Week 07 R4L16B 0003 1107 Rev. 1.4 Feb. 2011 Exposed metal pad should be left floating ...

Page 13

... Rev. 1.4 Feb. 2011 Summary Initial Release Added 4x4.5mm DFN package. Fixed DFN pinout. Modified DFN mechanical drawing and recommended pcb footprint. Added ESD ratings. Updated DFN package marking. Changed t and t spec limits FM24CL16B - 16Kb 3V I2C F-RAM Page ...

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